Dr Cloud Nyamhere

doctor cloud nyamhere applied physics lecturer

Dr Cloud Nyamhere

Chairperson :APPLIED PHYSICS AND TELECOMMUNICATIONS


Qualifications:

  • PhD-Physics (UP)
  •  MSc Applied Physics (UZ)
  •  BSc Physics with Ed(UZ)

Research Interests:

Semiconductor Device Physics and Electronic materials, particularly

  • Electrical characterization of defects
  • Semiconductor fabrication, and device processing
  • Nanomaterial and material sciences

Publications:

  • Nyamhere, F. Cristiano, F. Olivie, E. Bedel-Pereira, and Z. Essa, “Electrical and optical characterization of extended defects induced in p-type Si after Si ion implantation”, Physica Status Solidi C 11, no. 1 (2014) 146.
  • Nyamhere, F. Cristiano, F. Olivie, Z. Essa, E. Bedel-Pereira, D. Bolze, and Y. Yamamoto, “Deep level transient spectroscopy and predictive simulation of ion-implantation induced defects in n-type Si”, Journal of Applied Physics, 113 (2013) 184508.
  • Nyamhere, F. Cristiano, F. Olivie, E. Bedel-Pereira, J. Boucher, Z. Essa, D. Bolze, and Y. Yamamoto, “Electrical characterization of {311} defects and related junction leakage currents in n-type Si after ion implantation”, Ion Implantation Technology 2012, AIP Conf. Proc. 1496, (2012) 171.
  • Venter, C Nyamhere, F.D. Auret, P.J. Janse van Rensburg, and S.M.M. Coelho “Field dependence of the E1′ and M3’ electron trap in inductively coupled Ar plasma treated n-Gallium Arsenide” Journal of Applied Physics, 111 (2012) 093703.
  • Nyamhere, A. Venter, D.M. Murape, F.D. Auret, S.M.M. Coelho and J.R. Botha, “dc-Hydrogen plasma induced defects in bulk n-Ge.” Physica B 407 (2012) 2935.
  • Nyamhere, A. Venter, F.D. Auret, S.M.M. Coelho and D.M. Murape, “Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure” Journal of Applied Physics, 111 (2012) 044511.
  • A Venter, C Nyamhere, J.R. Botha, F.D. Auret, P.J. Janse van Rensburg, W.E. Meyer, S.M.M. Coelho, and I. Kolkovsky “Ar plasma induced deep levels in epitaxial n-GaAs” Journal of Applied Physics, 111 (2012) 013703.
  • D. Auret, P.J. Janse van Rensburg, W.E. Meyer, S.M.M. Coelho,V.I. Kolkovsky, J.R. Botha,C Nyamhere, and A. Venter, “inductively coupled plasma induced deep levels in epitaxial n-GaAs”, Physica B, 407 (2012) 1497.
  • Mtangi, J.M. Nel, F.D. Auret, A. Chawanda, C. Nyamhere, P. Janse van Rensburg, “Thermal annealing behavior of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements”, Material Science and Engineering B, 177 (2012) 180.
  • Chawanda, S.M. Coelho, F.D. Auret, W. Mtangi, C. Nyamhere, J.M. Nel, and M. Diale, “Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100)”. Journal of Alloys and Compounds, 513 (2012) 44.
  • M. Murape, N Eassa, C. Nyamhere, J.H. Neethling, R Betz, E. Coetsee, H.C. Swart, J.R. Botha and A. Venter, Improved GaSb surfaces using a (NH4)2S/(NH4)2S04 solution”, Physica B, 407 (2012) 1675.
  • Albert Chawanda, Cloud Nyamhere, Francois D Auret, Jackie Nel, Wilbert Mtangi, and Mmantsae Diale, “Electrical characterization of ruthenium Schottky contacts on n-Ge (100)”, Physica B, 407 (2012) 1570.
  • Nyamhere and A. Venter, “A comparison of the M3/M4 metastable defect detected in hydrogen and ICP Ar plasma treated n-GaAs”, Physica B, 407 (2012) 1638.
  • Mtangi, J.M. Nel, F.D. Auret, A. Chawanda, C. Nyamhere, and M. Diale, “Annealing and surface conduction on hydrogen peroxide treated bulk melt grown, single crystal ZnO”, Physica B 407 (2012) 1624.
  • Albert Chawanda, Wilbert Mtangi, Francois D Auret, Jackie Nel, Cloud Nyamhere, and Mmantsae Diale, Current-Voltage temperature characteristics of Au/n-Ge (100) Schottky diodes”, Physica B, 407 (2012)
  • Nyamhere, A.G.M. Das, F.D. Auret, A. Chawanda, C.A. Pineda-Vargas and A. Venter, “Deep level transient spectroscopy (DLTS)  study of defects introduced in antimony doped Ge by 2 MeV proton irradiation”, Physica B. 406 (2011) 3056.
  • Nyamhere, J.R. Botha and A. Venter, “Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment” Physica B, 406 (2011) 2273.
  • Chawanda, K. Roro, F.D Auret, W. Mtangi, C. Nyamhere and J.M. Nel, “Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)”. Materials Science in Semiconductor Processing 13 (2010) 371.
  • Chawanda, K. Roro, F.D Auret, W. Mtangi, C. Nyamhere, J.M. Nel, M. Diale, L. Leach, “The barrier height distribution in identically prepared Au/n-Ge (100) Schottky diodes”, Midlands State University J. Sc. and Agric.,March (2010) ISSN No. 1992-0903.
  • Chawanda, J.M. Nel, F.D. Auret, W. Mtangi, C. Nyamhere, M. Diale and L. Leach, “Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes”. Journal of Korean physical Society, 57 issue 6 (2010) 1970.
  • Mtangi, P.J. Janse van Rensburg, M. Diale, F.D. Auret, C. Nyamhere, J.M. Nel and A. Chawanda, Analysis of current voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range. Material Science and Engineering B, 171 (2010) 1.
  • Chawanda, C. Nyamhere, F. D. Auret, W. Mtangi, M. Diale and J. M. Nel “Comparison of metal Schottky contacts on n-Ge (100) at different annealing temperatures”. Physica Status Solidi C 7 issue 2 (2010) 248.
  • A. Chawanda, Nyamhere, F. D. Auret, W. Mtangi, M. Diale, “Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (100)”. Journal of alloys and compound, 492 (2010) 649.
  • Nyamhere, A.G.M. Das, F.D. Auret, A. Chawanda, W. Mtangi, Q. Odendaal and A. Carr, “Characterisation of defects introduced in Sb doped Ge by 3 KeV Ar ions sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS”, Physica B 404 (2009) 4379.
  • Chawanda, C. Nyamhere, F.D. Auret, W. Mtangi, T.T. Hlatshwayo and M. Diale, “Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process”, Physica B 404 (2009) 4482.
  • Mtangi, F.D. Auret, C. Nyamhere, P. Janse van Rensburg, A. Chawanda, M. Diale, J.M. Nel, and W.E. Meyer, “The dependence of barrier heights on temperature for Pd Schottky contacts on ZnO”. Physica B 404 (2009) 4402.
  • G.M. Das, C. Nyamhere and F.D. Auret, “A comparative study of electronic properties of defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation and (iii) by electron irradiation”, Surface and Coatings Technology, 203 (2009) 2628.
  • Mtangi, F.D. Auret, C. Nyamhere, P.J. Janse van Rensburg, M. Diale and A. Chawanda, “Analysis of temperature dependent I –V measurements on Pd/ZnO Schottky barrier diodes and determination of the Richardson constant”, Physica B. 404 (2009) 1092.
  • D. Auret, S.M.M Coelho, P.J. van Rensburg, C. Nyamhere and W.E. Meyer, “Electrical characterization of defects introduced during metallization process in n-type germanium”, Materials Science in Semiconductor Processing 11 (2008) 348.
  • Nyamhere, A.G.M. Das, F.D. Auret and M. Hayes, “Deep level transient spectroscopy characterisation of defects introduced in p-Si by electron beam deposition and proton irradiation”, Journal of Physics, Conference Series, 100 (2008) 042004.
  •  Cloud Nyamhere, Das, F.D. Auret, and A. Chawanda, “A study of electron induced defects in n-type germanium by deep devel transient spectroscopy (DLTS)”, Physica Status Solidi C 5 No. 2 (2008) 623.
  • M.M. Coelho, F.D. Auret, P.J. Janse van Rensberg, C. Nyamhere, J.M. Nel and M. Hayes, “IV and CV measurements of Schottky diodes deposited on Ge by electron beam and sputter deposition”, Physica Status Solidi C 5 No. 2 (2008) 626.
  • Nyamhere, F.D. Auret, A.G.M. Das and A. Chawanda, “A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS)”, Physica B 401- 402 (2007) 499.
  • Cloud Nyamhere, Chawanda, A.G.M. Das, F.D. Auret and M. Hayes, “Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition”, Physica B, 401- 402 (2007) 226.
  • D. Auret, S. Coelho, W.E. Meyer, C. Nyamhere, M. Hayes and J.M. Nel, “Electrical characterization of defects introduced during sputter deposition of Schottky Contacts on n-type Ge”, Journal of Electronic Materials 36 (2007) 1604.
  • Cloud Nyamhere,N.K. Deenapanray, F.D. Auret and F.C. Farlow, “Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS”, Physica B, 376-377 (2006) 161.
  • D. Auret, A.G.M. Das, C. Nyamhere, M. Hayes and N.G. van der Berg; “Thermal stability of Ti/Mo Schottky contacts on p-Si and defects introduced in p-Si during electron beam deposition of Ti/Mo”, Solid State Phenomena, 108-109 (2005) 561.